CobaltMaghrebV1, France, Analysis, bibRecord, 000284

Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system

Identifieur interne : 000284 ( France/Analysis ); précédent : 000283; suivant : 000285

Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system

Auteurs : N. Benouattas [Algérie] ; R. Halimi [Algérie] ; A. Bouabellou [Algérie] ; A. Mosser [France]

Source :

Thin solid films [ 0040-6090 ] ; 2001.

RBID : Pascal:01-0202515

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Couche mince, Chrome, Contact métal semiconducteur, Matériau semiconducteur, Silicium, Implantation ion, Phosphore ion, Interface solide solide, Cobalt siliciure, Evaporation faisceau électronique, Substrat, SIMS, RBS, Recuit thermique, 6865A, 6172T, Substrat Si, CrSi2, Cr Si.
Wicri :
- topic : Chrome.

English descriptors

KwdEn :
- Chromium, Cobalt silicides, Electron beam evaporation, Experimental study, Ion implantation, Metal-semiconductor contacts, Phosphorus ions, RBS, SIMS, Semiconductor materials, Silicon, Solid-solid interfaces, Substrates, Thermal annealing, Thin films.

Abstract

Chromium layers 800 Å thick are deposited by electron gun evaporation on, respectively, non-implanted, 5 × 10¹⁴ and 5 × 10¹⁵ at./cm² P⁺-implanted Si(111) substrates. The redistribution of phosphorus and the influence on chromium silicide growth are analyzed by secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectroscopy (RBS) after annealing between 450° and 550°C. It is shown that chromium silicide formation is retarded or inhibited by the presence of phosphorus. The implant diffuses out of the CrSi₂ surface layer in both implantation cases, but also accumulates at the CrSi₂/Si interface in the case of the higher dose.

Affiliations:

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to stream Main, to step Exploration: 000C23
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Pascal:01-0202515

Le document en format XML

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<author><name sortKey="Halimi, R" sort="Halimi, R" uniqKey="Halimi R" first="R." last="Halimi">R. Halimi</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chromium</term>
<term>Cobalt silicides</term>
<term>Electron beam evaporation</term>
<term>Experimental study</term>
<term>Ion implantation</term>
<term>Metal-semiconductor contacts</term>
<term>Phosphorus ions</term>
<term>RBS</term>
<term>SIMS</term>
<term>Semiconductor materials</term>
<term>Silicon</term>
<term>Solid-solid interfaces</term>
<term>Substrates</term>
<term>Thermal annealing</term>
<term>Thin films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Couche mince</term>
<term>Chrome</term>
<term>Contact métal semiconducteur</term>
<term>Matériau semiconducteur</term>
<term>Silicium</term>
<term>Implantation ion</term>
<term>Phosphore ion</term>
<term>Interface solide solide</term>
<term>Cobalt siliciure</term>
<term>Evaporation faisceau électronique</term>
<term>Substrat</term>
<term>SIMS</term>
<term>RBS</term>
<term>Recuit thermique</term>
<term>6865A</term>
<term>6172T</term>
<term>Substrat Si</term>
<term>CrSi2</term>
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<front><div type="abstract" xml:lang="en">Chromium layers 800 Å thick are deposited by electron gun evaporation on, respectively, non-implanted, 5 × 10<sup>14</sup>
 and 5 × 10<sup>15</sup>
 at./cm<sup>2</sup>
 P<sup>+</sup>
-implanted Si(111) substrates. The redistribution of phosphorus and the influence on chromium silicide growth are analyzed by secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectroscopy (RBS) after annealing between 450° and 550°C. It is shown that chromium silicide formation is retarded or inhibited by the presence of phosphorus. The implant diffuses out of the CrSi<sub>2</sub>
 surface layer in both implantation cases, but also accumulates at the CrSi<sub>2</sub>
/Si interface in the case of the higher dose.</div>
</front>
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Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system

Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri